公开(公告)号：US12024693B2

公开(公告)日：2024-07-02

申请号：US17044989

申请日：2019-03-25

Applicant: BASF SE

Inventor： Joannes Theodorus Valentinus Hoogboom ,  Andreas Klipp ,  Jhih Jheng Ke ,  Yi Ping Cheng

IPC: C09K13/00 ,  C11D7/26 ,  C11D7/32 ,  C11D7/34 ,  C11D7/50 ,  G03F7/42

CPC classification number: C11D7/34 ,  C09K13/00 ,  C11D7/263 ,  C11D7/3281 ,  C11D7/5009 ,  G03F7/426 ,  C11D2111/22

Abstract: Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the cleaning composition of the present invention and one or more oxidants. Furthermore, it is described the use of an imidazolidinethione in a composition for etching or partially etching of a layer or mask on the surface of a semiconductor substrate and/or for cleaning a semiconductor substrate.

公开(公告)号：US11377624B2

公开(公告)日：2022-07-05

申请号：US16767336

申请日：2018-12-05

Applicant: BASF SE

Inventor： Jhih Jheng Ke ,  Andreas Klipp ,  Yi Ping Cheng ,  Joannes Theodorus Valentinus Hoogboom

IPC: C11D7/08 ,  C11D3/24 ,  C11D3/00 ,  C11D3/20 ,  C11D3/30 ,  C11D3/34 ,  C11D11/00 ,  H01L21/02

Abstract: A cleaning composition for post-etch or post ash residue removal from a substrate used in semiconductor industry and a corresponding use of said cleaning composition is described. Further described is a process for the manufacture of a semiconductor device from a semiconductor substrate, comprising the step of post-etch or post ash residue removal from a substrate by contacting the substrate with a cleaning composition according to the invention.