- 专利标题: Methods to embed magnetic material as first layer on coreless substrates and corresponding structures
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申请号: US15938114申请日: 2018-03-28
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公开(公告)号: US11417614B2公开(公告)日: 2022-08-16
- 发明人: Cheng Xu , Kyu-Oh Lee , Junnan Zhao , Rahul Jain , Ji Yong Park , Sai Vadlamani , Seo Young Kim
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwabe, Williamson & Wyatt, P.C.
- 主分类号: H01L23/64
- IPC分类号: H01L23/64 ; H01L23/498 ; H01L23/00 ; H01L21/48
摘要:
Embodiments include an electronic package that includes a first layer that comprises a dielectric material and a second layer over the first layer, where the second layer comprises a magnetic material. In an embodiment, a third layer is formed over the second layer, where the third layer comprises a dielectric material. In an embodiment, the third layer entirely covers a first surface of the second layer. In an embodiment a first conductive layer and a second conductive layer are embedded within the second layer. In an embodiment, sidewalls of the first conductive layer and the second conductive layer are substantially vertical.
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