Invention Grant
- Patent Title: Formulations for high selective silicon nitride etch
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Application No.: US17000045Application Date: 2020-08-21
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Publication No.: US11421157B2Publication Date: 2022-08-23
- Inventor: Daniela White , David Kuiper , Susan Dimeo
- Applicant: ENTEGRIS, INC.
- Applicant Address: US MA Billerica
- Assignee: ENTEGRIS, INC.
- Current Assignee: ENTEGRIS, INC.
- Current Assignee Address: US MA Billerica
- Main IPC: C09K13/08
- IPC: C09K13/08 ; H01L21/311 ; C09K13/06
Abstract:
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
Public/Granted literature
- US20210054287A1 FORMULATIONS FOR HIGH SELECTIVE SILICON NITRIDE ETCH Public/Granted day:2021-02-25
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