公开(公告)号：US20230399754A1

公开(公告)日：2023-12-14

申请号：US18207569

申请日：2023-06-08

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Michael L. White ,  YoungMin Kim ,  Akshay Rajopadhye ,  Atanu K. Das

IPC: C23G1/18 ,  B81C1/00

CPC classification number: C23G1/18 ,  B81C1/00857 ,  B81C2201/0142 ,  B81C2201/0133

Abstract: The present disclosure relates to removal compositions for at least partially removing post-chemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.

公开(公告)号：US11365351B2

公开(公告)日：2022-06-21

申请号：US17066152

申请日：2020-10-08

Applicant: ENTEGRIS, INC.

Inventor： YoungMin Kim ,  Michael White ,  Daniela White ,  Emanuel I. Cooper ,  Steven M. Bilodeau

IPC: C09K13/06 ,  H01L21/311 ,  H01J37/32

Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

公开(公告)号：US11164738B2

公开(公告)日：2021-11-02

申请号：US15874388

申请日：2018-01-18

Applicant: Entegris, Inc.

Inventor： Daniela White ,  Thomas Parson ,  Michael White ,  Emanuel I. Cooper ,  Atanu Das

IPC: C09G1/04 ,  H01L21/02 ,  H01L21/321 ,  C08L33/08 ,  C08L33/10 ,  C09G1/16

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

公开(公告)号：US11124746B2

公开(公告)日：2021-09-21

申请号：US16659471

申请日：2019-10-21

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Michael White ,  Jun Liu ,  Elizabeth Thomas

IPC: C11D7/32 ,  C11D11/00 ,  C11D3/00 ,  C11D3/30 ,  B08B3/08 ,  C11D1/62 ,  C11D1/58 ,  C11D1/90 ,  H01L21/02 ,  C11D3/28

Abstract: The disclosure generally relates to a composition and process for cleaning residue and/or contaminants from microelectronic devices having said residue and contaminants thereon. The residue may include post-CMP, post-etch, and/or post-ash residue. The compositions and methods are particularly advantageous when cleaning a microelectronic surface comprising copper, low-k dielectric materials, and barrier materials comprising at least one of tantalum-containing material, cobalt-containing material, tantalum-containing, tungsten-containing, and ruthenium-containing material.

公开(公告)号：US11781066B2

公开(公告)日：2023-10-10

申请号：US17747731

申请日：2022-05-18

Applicant: ENTEGRIS, INC.

Inventor： YoungMin Kim ,  Michael White ,  Daniela White ,  Emanuel Cooper ,  Steven M. Bilodeau

IPC: C09K13/06 ,  H01L21/311 ,  H01J37/32

CPC classification number: C09K13/06 ,  H01J37/32724 ,  H01J37/32917 ,  H01L21/31111

Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

公开(公告)号：US20220395865A1

公开(公告)日：2022-12-15

申请号：US17888305

申请日：2022-08-15

Applicant: ENTEGRIS, INC.

Inventor： Daniela White

IPC: B08B1/00 ,  B08B3/08 ,  B08B1/02 ,  B24B37/34 ,  C11D3/30 ,  C11D3/37 ,  C11D3/20 ,  C11D7/34 ,  C11D7/32 ,  C11D7/26 ,  B08B3/04 ,  C11D11/00 ,  C11D7/10 ,  A46B13/00 ,  H01L21/67

Abstract: Described are methods for removing abrasive particles from a polymeric surface, such as from a polymeric surface of a cleaning brush used in a post chemical-mechanical processing cleaning step, as well as related cleaning solutions.

公开(公告)号：US11421157B2

公开(公告)日：2022-08-23

申请号：US17000045

申请日：2020-08-21

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  David Kuiper ,  Susan Dimeo

IPC: C09K13/08 ,  H01L21/311 ,  C09K13/06

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

公开(公告)号：US11149235B2

公开(公告)日：2021-10-19

申请号：US16515935

申请日：2019-07-18

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Elizabeth Thomas ,  Jun Liu ,  Michael White ,  Chao-Yu Wang ,  Donald Frye

IPC: C11D7/32 ,  C11D11/00 ,  C11D7/50 ,  H01L21/02 ,  C11D7/34

Abstract: A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.

公开(公告)号：US11124740B2

公开(公告)日：2021-09-21

申请号：US16689850

申请日：2019-11-20

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Michael White ,  Daniela White

IPC: C11D7/32 ,  C11D3/28 ,  C11D1/72 ,  H01L21/02 ,  C11D3/36 ,  C11D3/30

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

公开(公告)号：US11085011B2

公开(公告)日：2021-08-10

申请号：US16527809

申请日：2019-07-31

Applicant: ENTEGRIS, INC.

Inventor： Elizabeth Thomas ,  Michael White ,  Daniela White ,  Atanu Kumar Das

IPC: C11D7/32 ,  C11D11/00 ,  C11D3/30 ,  C11D3/39 ,  C11D3/395 ,  C11D3/20 ,  H01L21/02 ,  C11D3/37 ,  C11D3/22

Abstract: The invention provides a removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device.