公开(公告)号：US11421157B2

公开(公告)日：2022-08-23

申请号：US17000045

申请日：2020-08-21

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  David Kuiper ,  Susan Dimeo

IPC: C09K13/08 ,  H01L21/311 ,  C09K13/06

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

公开(公告)号：US12203022B2

公开(公告)日：2025-01-21

申请号：US17855603

申请日：2022-06-30

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  David Kuiper ,  Susan Dimeo

IPC: C09K13/08 ,  C09K13/06 ,  H01L21/311

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

公开(公告)号：US20220333012A1

公开(公告)日：2022-10-20

申请号：US17855603

申请日：2022-06-30

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  David Kuiper ,  Susan Dimeo

IPC: C09K13/08 ,  H01L21/311 ,  C09K13/06

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.