- 专利标题: Methods to selectively embed magnetic materials in substrate and corresponding structures
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申请号: US15938119申请日: 2018-03-28
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公开(公告)号: US11450471B2公开(公告)日: 2022-09-20
- 发明人: Cheng Xu , Kyu-Oh Lee , Junnan Zhao , Rahul Jain , Ji Yong Park , Sai Vadlamani , Seo Young Kim
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwabe, Williamson & Wyatt, P.C.
- 主分类号: H01F27/24
- IPC分类号: H01F27/24 ; H01F27/28 ; H01F27/02
摘要:
Embodiments include an inductor that comprises an inductor trace and a magnetic body surrounding the inductor trace. In an embodiment, the magnetic body comprises a first step surface and a second step surface. Additional embodiments include an inductor that includes a barrier layer. In an embodiment, an inductor trace is formed over a first surface of the barrier layer. Embodiments include a first magnetic body over the inductor trace and the first surface of the barrier layer, and a second magnetic body over a second surface of the barrier layer opposite the first surface. In an embodiment, a width of the second magnetic body is greater than a width of the first magnetic body.
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