- 专利标题: Optimized storage charge loss management
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申请号: US17212531申请日: 2021-03-25
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公开(公告)号: US11456051B1公开(公告)日: 2022-09-27
- 发明人: Gary F. Besinga , Renato C. Padilla , Tawalin Opastrakoon , Sampath K. Ratnam , Michael G. Miller , Christopher M. Smitchger , Vamsi Pavan Rayaprolu , Ashutosh Malshe
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Lowenstein Sandler LLP
- 主分类号: G11C29/44
- IPC分类号: G11C29/44 ; G11C29/42 ; G11C16/26 ; G11C29/00 ; G11C16/10 ; G11C29/50
摘要:
A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including receiving a set of read offsets for a block of the memory device, the set of read offsets comprising a default read offset, selecting the default read offset from the set of read offsets based on one or more criteria, applying the default read offset to a read operation performed with respect to the block, determining that a second set of criteria associated with removing the default read offset is satisfied, and removing the default read offset responsive to determining that the second set of criteria is satisfied.
公开/授权文献
- US20220310190A1 OPTIMIZED STORAGE CHARGE LOSS MANAGEMENT 公开/授权日:2022-09-29
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