- 专利标题： Semiconductor element intermediate, composition for forming metal-containing film, method of producing semiconductor element intermediate, and method of producing semiconductor element
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申请号： US16757830申请日： 2018-11-13
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公开(公告)号： US11487205B2公开(公告)日： 2022-11-01
- 发明人: Hiroko Wachi , Yasuhisa Kayaba , Hirofumi Tanaka , Kenichi Fujii
- 申请人： MITSUI CHEMICALS, INC.
- 申请人地址： JP Tokyo
- 专利权人： MITSUI CHEMICALS, INC.
- 当前专利权人： MITSUI CHEMICALS, INC.
- 当前专利权人地址： JP Tokyo
- 代理机构： Buchanan, Ingersoll & Rooney PC
- 优先权： JPJP2017-221919 20171117,JPJP2018-060575 20180327
- 国际申请： PCT/JP2018/042035 WO 20181113
- 国际公布： WO2019/098208 WO 20190523
- 主分类号： G03F7/11
- IPC分类号： G03F7/11 ; H01L21/311 ; G03F7/075
摘要：
Provided are a semiconductor element intermediate including: a substrate and a multilayer resist layer, in which the multilayer resist layer includes a metal-containing film, and in which the metal-containing film has a content of germanium element of 20 atm % or more, or a total content of tin element, indium element, and gallium element of 1 atm % or more, as measured by X-ray photoelectric spectroscopy, and an application of the semiconductor intermediate.
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