公开(公告)号：US11487205B2

公开(公告)日：2022-11-01

申请号：US16757830

申请日：2018-11-13

Applicant: MITSUI CHEMICALS, INC.

Inventor： Hiroko Wachi ,  Yasuhisa Kayaba ,  Hirofumi Tanaka ,  Kenichi Fujii

IPC: G03F7/11 ,  H01L21/311 ,  G03F7/075

Abstract: Provided are a semiconductor element intermediate including: a substrate and a multilayer resist layer, in which the multilayer resist layer includes a metal-containing film, and in which the metal-containing film has a content of germanium element of 20 atm % or more, or a total content of tin element, indium element, and gallium element of 1 atm % or more, as measured by X-ray photoelectric spectroscopy, and an application of the semiconductor intermediate.

公开(公告)号：US10752805B2

公开(公告)日：2020-08-25

申请号：US15776031

申请日：2016-11-16

Applicant: MITSUI CHEMICALS, INC.

Inventor： Yasuhisa Kayaba ,  Hirofumi Tanaka ,  Koji Inoue

IPC: C09D11/00 ,  H01L21/683 ,  C09D177/06 ,  C08G73/02 ,  C08G73/10 ,  H01L21/02 ,  H01L21/3105 ,  C08G69/42 ,  H01L23/29 ,  C08K5/092 ,  C08K3/28 ,  C08K5/09

Abstract: Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(═O)OX groups are —C(═O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).

公开(公告)号：US20140367868A1

公开(公告)日：2014-12-18

申请号：US14372237

申请日：2013-01-16

Applicant: MITSUI CHEMICALS, INC.

Inventor： Shoko Ono ,  Yasuhisa Kayaba ,  Hirofumi Tanaka ,  Kazuo Kohmura ,  Tsuneji Suzuki ,  Shigeru Mio

IPC: C08G73/02 ,  H01L23/29 ,  H01L21/56

CPC classification number: C08G73/0206 ,  C08G73/0213 ,  C08G73/0226 ,  C08G2190/00 ,  C09J179/02 ,  C09K3/1006 ,  C09K2003/1087 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/56 ,  H01L23/293 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/2982 ,  H01L2924/00

Abstract: In the invention, a sealing composition for a semiconductor is provided which includes a polymer that includes two or more cationic functional groups including at least one of a tertiary nitrogen atom or a quaternary nitrogen atom, that has a weight average molecular weight of from 2,000 to 1,000,000, and that has a branching degree of 48% or more, wherein a content of sodium and a content of potassium in the sealing composition are each 10 ppb by weight or less on an element basis.

Abstract translation: 在本发明中，提供了一种半导体用密封组合物，其包括包含两个或更多个阳离子官能团的聚合物，所述阳离子官能团包括叔氮原子或季氮原子中的至少一个，其重均分子量为2000〜 1,000,000，并且具有48％以上的支化度，其中，密封组合物中钠的含量和钾含量各自为10ppb以下。

公开(公告)号：US11965109B2

公开(公告)日：2024-04-23

申请号：US16929638

申请日：2020-07-15

Applicant: MITSUI CHEMICALS, INC.

Inventor： Yasuhisa Kayaba ,  Hirofumi Tanaka ,  Koji Inoue

IPC: C09D177/06 ,  C08G69/42 ,  C08G73/02 ,  C08G73/10 ,  H01L21/02 ,  H01L21/3105 ,  H01L23/29 ,  C08K3/28 ,  C08K5/09 ,  C08K5/092

CPC classification number: C09D177/06 ,  C08G69/42 ,  C08G73/0293 ,  C08G73/1003 ,  H01L21/02118 ,  H01L21/02142 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02343 ,  H01L21/3105 ,  H01L23/296 ,  C08K3/28 ,  C08K5/09 ,  C08K5/092

Abstract: Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(═O)OX groups are —C(═O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).

公开(公告)号：US11581197B2

公开(公告)日：2023-02-14

申请号：US16611653

申请日：2018-05-10

Applicant: Mitsui Chemicals, Inc.

Inventor： Jun Kamada ,  Kaichiro Haruta ,  Yasuhisa Kayaba ,  Kazuo Kohmura ,  Yoichi Kodama

IPC: H01L21/56 ,  H01L23/29

Abstract: This method for producing a semiconductor device comprises: a first step wherein a plurality of semiconductor chips are affixed onto a supporting substrate such that circuit surfaces of the semiconductor chips face the supporting substrate; a second step wherein a plurality of sealed layers are formed at intervals by applying the sealing resin onto the semiconductor chips by three-dimensional modeling method, each sealed layer containing one or more semiconductor chips embedded in a sealing resin; a third step wherein the sealed layers are cured or solidified; and a fourth step wherein sealed bodies are obtained by separating the cured or solidified sealed layers from the supporting substrate.

公开(公告)号：US10950532B2

公开(公告)日：2021-03-16

申请号：US15535761

申请日：2015-12-14

Applicant: Mitsui Chemicals, Inc.

Inventor： Yasuhisa Kayaba ,  Shoko Ono ,  Hirofumi Tanaka ,  Koji Inoue ,  Hiroko Wachi

IPC: H01L23/498 ,  H01L23/14 ,  H01L21/48 ,  H01L21/768 ,  H01L21/02 ,  H01L23/48 ,  H01L23/532

Abstract: A substrate intermediary body includes: a substrate having a hole in a thickness direction, and a conductor being disposed in the hole; and an adhesion layer formed on a wall surface of the hole. The adhesion layer contains a reaction product of a polymer (A) having a cationic functional group and having a weight-average molecular weight of from 2,000 to 1,000,000 and a polyvalent carboxylic acid compound (B) having two or more carboxyl groups per molecule or a derivative thereof.

公开(公告)号：US11474429B2

公开(公告)日：2022-10-18

申请号：US16619696

申请日：2018-06-05

Applicant: MITSUI CHEMICALS, INC.

Inventor： Takashi Oda ,  Hisanori Ohkita ,  Yasuhisa Kayaba

IPC: G03F7/00 ,  B29C59/02 ,  C08G61/08 ,  H01L21/027

Abstract: A method of producing a substrate with a fine uneven pattern is a method of producing a substrate having a fine uneven pattern on a surface thereof, the method including a step (a) of preparing a laminate provided with a substrate and a first resin layer provided on the substrate and having a first fine uneven pattern formed on a surface thereof; and a step (b) of forming a second fine uneven pattern corresponding to the first fine uneven pattern on the surface of the substrate by etching the surface of the first fine uneven pattern using the first resin layer as a mask, in which the first resin layer is formed of a resin composition (P) including a fluorine-containing cyclic olefin polymer (A) or a cured product of the resin composition (P).

公开(公告)号：US10988647B2

公开(公告)日：2021-04-27

申请号：US16606789

申请日：2018-04-19

Applicant: Mitsui Chemicals, Inc.

Inventor： Jun Kamada ,  Kaichiro Haruta ,  Takashi Unezaki ,  Kiyomi Imagawa ,  Kenichi Fujii ,  Yasuhisa Kayaba ,  Kazuo Kohmura

IPC: C09J179/08 ,  C09J5/00 ,  H01L21/304 ,  H01L21/56

Abstract: The purpose of the present invention is to provide a semiconductor substrate manufacturing method, which prevents detachment of a semiconductor wafer being ground, and which prevents cracking or chipping in a semiconductor substrate obtained. In order to solve the problem, the semiconductor substrate manufacturing method comprises: a polyimide layer forming step of forming a polyimide layer on a support material; a wafer attaching step of affixing the support material and a semiconductor wafer to each other with the polyimide layer disposed therebetween; a wafer grinding step of grinding the semiconductor wafer; a support material peeling step of peeling the support material from the polyimide layer; and a polyimide layer peeling step of peeling the polyimide layer from the semiconductor wafer. The polyimide layer includes polyimide which includes a benzophenone skeleton and an aliphatic structure, wherein an amine equivalent weight is 4000 to 20000.

公开(公告)号：US09169353B2

公开(公告)日：2015-10-27

申请号：US14372237

申请日：2013-01-16

Applicant: MITSUI CHEMICALS, INC.

Inventor： Shoko Ono ,  Yasuhisa Kayaba ,  Hirofumi Tanaka ,  Kazuo Kohmura ,  Tsuneji Suzuki ,  Shigeru Mio

IPC: C08G73/02 ,  H01L23/29 ,  H01L21/02 ,  H01L23/532 ,  H01L21/56 ,  C09J179/02 ,  C09K3/10

CPC classification number: C08G73/0206 ,  C08G73/0213 ,  C08G73/0226 ,  C08G2190/00 ,  C09J179/02 ,  C09K3/1006 ,  C09K2003/1087 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/56 ,  H01L23/293 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/2982 ,  H01L2924/00

Abstract: In the invention, a sealing composition for a semiconductor is provided which includes a polymer that includes two or more cationic functional groups including at least one of a tertiary nitrogen atom or a quaternary nitrogen atom, that has a weight average molecular weight of from 2,000 to 1,000,000, and that has a branching degree of 48% or more, wherein a content of sodium and a content of potassium in the sealing composition are each 10 ppb by weight or less on an element basis.

Abstract translation: 在本发明中，提供了一种半导体用密封组合物，其包括包含两个或更多个阳离子官能团的聚合物，所述阳离子官能团包括叔氮原子或季氮原子中的至少一个，其重均分子量为2000〜 1,000,000，并且具有48％以上的支化度，其中，密封组合物中钠的含量和钾含量各自为10ppb以下。

公开(公告)号：US11859110B2

公开(公告)日：2024-01-02

申请号：US16607898

申请日：2018-04-24

Applicant: Mitsui Chemicals, Inc.

Inventor： Jun Kamada ,  Kazuo Kohmura ,  Yasuhisa Kayaba

IPC: C09J183/04 ,  B32B7/12 ,  C09J179/02 ,  H01L23/00 ,  B32B15/20 ,  B32B27/34 ,  B32B27/28

CPC classification number: C09J183/04 ,  B32B7/12 ,  B32B15/20 ,  B32B27/28 ,  B32B27/34 ,  C09J179/02 ,  H01L24/00 ,  H01L24/32 ,  B32B2250/03 ,  B32B2255/26 ,  B32B2457/14 ,  H01L2224/32145 ,  H01L2224/8385 ,  H01L2924/12041 ,  H01L2924/146 ,  H01L2924/1434 ,  H01L2924/1461

Abstract: A body, comprising stacked substrates, wherein: a first substrate, an adhesion layer comprising a reaction product of a compound (A), which has a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom and which has a defined weight average molecular weight, and a crosslinking agent (B), which has three or more —C(═O)OX groups in a molecule, in which from one to six of the three or more —C(═O)OX groups are —C(═O)OH groups and which has a weight average molecular weight of from 200 to 600, X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms, and a second substrate, are layered in this order, and the compound (A) comprises at least one selected from the group consisting of a defined aliphatic amine and a defined compound having a siloxane bond and an amino group.