Invention Grant
- Patent Title: Integrated circuits
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Application No.: US16859914Application Date: 2020-04-27
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Publication No.: US11495559B2Publication Date: 2022-11-08
- Inventor: Hsien-Wei Chen , Ming-Fa Chen , Sung-Feng Yeh , Ying-Ju Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/00 ; H01L23/48 ; H01L21/768

Abstract:
One of integrated circuits includes a substrate, a through via, a conductive pad and at least one via. The through via is disposed in the substrate. The conductive pad is disposed over and electrically connected to the through via, and the conductive pad includes at least one dielectric pattern therein. The via is disposed between and electrically connected to the through via and the conductive pad.
Public/Granted literature
- US20210335735A1 INTEGRATED CIRCUITS Public/Granted day:2021-10-28
Information query
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