Invention Grant
- Patent Title: Barrier ruthenium chemical mechanical polishing slurry
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Application No.: US17318011Application Date: 2021-05-12
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Publication No.: US11505718B2Publication Date: 2022-11-22
- Inventor: David (Tawei) Lin , Bin Hu , Liqing (Richard) Wen , Yannan Liang , Ting-Kai Huang
- Applicant: fujifilm electronic materials u.s.a., inc
- Applicant Address: US RI North Kingstown
- Assignee: fujifilm electronic materials u.s.a., inc
- Current Assignee: fujifilm electronic materials u.s.a., inc
- Current Assignee Address: US RI North Kingstown
- Agency: Ohlandt, Greeley, Ruggiero and Perle, LLP
- Main IPC: C09G1/02
- IPC: C09G1/02 ; H01L21/321 ; C09K3/14 ; C09G1/06 ; C09K13/06 ; C09G1/04 ; B24B1/00 ; C09G1/00 ; B24B37/04 ; H01L21/306
Abstract:
A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
Public/Granted literature
- US20210261822A1 BARRIER RUTHENIUM CHEMICAL MECHANICAL POLISHING SLURRY Public/Granted day:2021-08-26
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