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    Resistivity-based adjustment of measurements from in-situ monitoring
    2.
    发明授权
    Resistivity-based adjustment of measurements from in-situ monitoring 有权

    公开(公告)号：US11199605B2

    公开(公告)日：2021-12-14

    申请号：US15867372

    申请日：2018-01-10

    申请人： Applied Materials, Inc.

    发明人： Kun Xu ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Tzu-Yu Liu

    IPC分类号： G01R35/00 ,  C09G1/00 ,  B24B37/04 ,  B24B37/005 ,  C09G1/02 ,  H01L21/67 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321

    摘要： A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values.

    Polishing slurry and polishing material
    5.
    发明授权
    Polishing slurry and polishing material 有权

    公开(公告)号：US11015086B2

    公开(公告)日：2021-05-25

    申请号：US16067380

    申请日：2017-01-17

    申请人： Mitsui Mining & Smelting Co., Ltd.

    发明人： Masayuki Matsuyama ,  Akinori Kumagai

    IPC分类号： H01L29/20 ,  H01L29/16 ,  H01L21/306 ,  H01L21/02 ,  C09K3/14 ,  C09G1/04 ,  C09G1/02 ,  C09G1/00 ,  B24B37/00

    摘要： A polishing slurry according to the present invention contains: abrasive grains made of a metal oxide; a permanganate; and an inorganic compound other than the permanganate. The inorganic compound is such that a solution that is obtained by adding the inorganic compound to a 1.0 mass % aqueous solution of the permanganate so that the inorganic compound accounts for 1.0 mass % of the resultant aqueous solution has an oxidation-reduction potential higher than that of the 1.0 mass % aqueous solution of the permanganate. It is preferable that the inorganic compound be contained in an amount of 0.7 parts by mass or more and 150 parts by mass or less relative to 100 parts by mass of the permanganate. It is also preferable that the abrasive grains made of a metal oxide be manganese oxide particles.

    Chemical mechanical polishing slurry composition for polishing polycrystalline silicon film
    6.
    发明授权
    Chemical mechanical polishing slurry composition for polishing polycrystalline silicon film 有权

    公开(公告)号：US10767081B2

    公开(公告)日：2020-09-08

    申请号：US16192748

    申请日：2018-11-15

    申请人： SOULBRAIN CO., LTD.

    发明人： Kyung Il Park ,  Seok Joo Kim ,  Hyeong Ju Lee

    IPC分类号： C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/461

    摘要： A chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film is presented, comprising: a solvent; a polishing agent; a pH adjuster; and at least one additive selected from the group consisting of a compound represented by Chemical Formula 1 below, a compound represented by Chemical Formula 2 below, and a tautomer thereof.The chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film exhibits a high polishing speed and has various polishing selectivities when employed in a process for polishing a polycrystalline silicon film of a semiconductor wafer, and thus the composition may be effectively used as a composition for a process for polishing a polycrystalline silicon surface for the formation of highly integrated multilayer structured devices.