Invention Grant
- Patent Title: Deep in memory architecture using resistive switches
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Application No.: US16147091Application Date: 2018-09-28
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Publication No.: US11522012B2Publication Date: 2022-12-06
- Inventor: Jack T. Kavalieros , Ian A. Young , Ram Krishnamurthy , Ravi Pillarisetty , Sasikanth Manipatruni , Gregory Chen , Hui Jae Yoo , Van H. Le , Abhishek Sharma , Raghavan Kumar , Huichu Liu , Phil Knag , Huseyin Sumbul
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L27/24
- IPC: H01L27/24 ; G11C13/00 ; H01L45/00 ; H01L29/51

Abstract:
A DIMA semiconductor structure is disclosed. The DIMA semiconductor structure includes a frontend including a semiconductor substrate, a transistor switch of a memory cell coupled to the semiconductor substrate and a computation circuit on the periphery of the frontend coupled to the semiconductor substrate. Additionally, the DIMA includes a backend that includes an RRAM component of the memory cell that is coupled to the transistor switch.
Information query
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