Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US17127095Application Date: 2020-12-18
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Publication No.: US11532703B2Publication Date: 2022-12-20
- Inventor: Huan-Chieh Su , Cheng-Chi Chuang , Shang-Wen Chang , Yi-Hsun Chiu , Pei-Yu Wang , Ching-Wei Tsai , Chih-Hao Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/092 ; H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L23/538

Abstract:
In an embodiment, a device includes: a power rail contact; an isolation region on the power rail contact; a first dielectric fin on the isolation region; a second dielectric fin adjacent the isolation region and the power rail contact; a first source/drain region on the second dielectric fin; and a source/drain contact between the first source/drain region and the first dielectric fin, the source/drain contact contacting a top surface of the first source/drain region, a side surface of the first source/drain region, and a top surface of the power rail contact.
Public/Granted literature
- US20210376076A1 Semiconductor Device and Method Public/Granted day:2021-12-02
Information query
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