- Patent Title: Method and device for failure analysis using RF-based thermometry
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Application No.: US16911466Application Date: 2020-06-25
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Publication No.: US11551956B2Publication Date: 2023-01-10
- Inventor: Chandrashekara Shashank Kaira , Phillip C. Miller , Purushotham Kaushik Muthur Srinath , Deepak Goyal
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Viering, Jentschura & Partner MBB
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G01J5/00

Abstract:
According to the various examples, a fully integrated system and method for failure analysis using RF-based thermometry enable the detection and location of defects and failures in complex semiconductor packaging architectures. The system provides synchronous amplified RF signals to generate unique thermal signatures at defect locations based on dielectric relaxation loss and heating.
Public/Granted literature
- US20210407833A1 METHOD AND DEVICE FOR FAILURE ANALYSIS USING RF-BASED THERMOMETRY Public/Granted day:2021-12-30
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