Invention Grant
- Patent Title: Spin orbit torque memory devices and methods of fabrication
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Application No.: US16246362Application Date: 2019-01-11
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Publication No.: US11574666B2Publication Date: 2023-02-07
- Inventor: Tanay Gosavi , Sasikanth Manipatruni , Chia-Ching Lin , Kaan Oguz , Ian Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/12 ; H01L43/08 ; H01L43/02 ; H01L43/10 ; H01L27/22

Abstract:
A memory device includes a spin orbit electrode structure having a dielectric structure including a first sidewall, a second sidewall opposite to the first sidewall, a top surface. The spin orbit electrode structure further includes an electrode having a spin orbit material adjacent to the dielectric structure, where the electrode has a first electrode portion on the top surface, a second electrode portion adjacent to the first sidewall and a third electrode portion adjacent to the second sidewall. The first electrode portion, the second electrode portion and the third electrode portion are contiguous. The spin orbit electrode structure further includes a conductive interconnect in contact with the second electrode portion or the third electrode portion. The memory device further includes a magnetic junction device on a portion of the top surface of the first electrode portion.
Public/Granted literature
- US20200227105A1 SPIN ORBIT TORQUE MEMORY DEVICES AND METHODS OF FABRICATION Public/Granted day:2020-07-16
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