Invention Grant
- Patent Title: High voltage field effect transistors with self-aligned silicide contacts and methods for making the same
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Application No.: US17348328Application Date: 2021-06-15
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Publication No.: US11575015B2Publication Date: 2023-02-07
- Inventor: Mitsuhiro Togo , Jun Akaiwa , Hiroshi Nakatsuji , Masashi Ishida
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L29/417 ; H01L29/06 ; H01L27/088 ; H01L29/78 ; H01L21/8234
Abstract:
A field effect transistor includes a source region and a drain region formed within and/or above openings in a dielectric capping mask layer overlying a semiconductor substrate and a gate electrode. A source-side silicide portion and a drain-side silicide portion are self-aligned to the source region and to the drain region, respectively.
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