The disclosed technology relates generally to semiconductor devices and more particularly to magnetic tunnel junction devices. According to an aspect, an MTJ device comprises a spin-orbit-torque (SOT)-layer. The MTJ device additionally comprises a first free layer, a second free layer, a reference layer and a tunnel barrier layer arranged between the second free layer and the reference layer. The MTJ device further comprises a spacer layer arranged as an interfacial layer between the first free layer and the second free layer. The SOT-layer is adapted to switch a magnetization direction of the first free layer through SOT. The first free layer is adapted to generate a magnetic stray field acting on the second free layer such that a magnetization direction of the second free layer is responsive to a magnetization direction of the first free layer. According to another aspect, a circuit comprises the MTJ device.