公开(公告)号：US11545621B2

公开(公告)日：2023-01-03

申请号：US15930272

申请日：2020-05-12

Applicant: IMEC vzw

Inventor： Sebastien Couet ,  Johan Swerts

IPC: H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01F10/30

Abstract: The disclosed technology relates generally to semiconductor devices, and more particularly to a layer stack for a magnetic tunnel junction (MTJ) device, and a method of forming the same. According to an aspect, a layer stack for a (MTJ) device comprises a seed layer structure, a pinning layer structure arranged above the seed layer structure, and above the pinning layer structure a Fe-comprising reference layer structure and a free layer structure separated by a tunnel barrier layer. The seed layer structure comprises a Ru-comprising layer and a Cr-comprising layer. The Cr-comprising layer forms an upper layer of the seed layer structure.

公开(公告)号：US10770213B2

公开(公告)日：2020-09-08

申请号：US16409585

申请日：2019-05-10

Applicant: IMEC vzw

Inventor： Johan Swerts ,  Sebastien Couet

IPC: G11B5/39 ,  H01F10/30 ,  H01F10/13 ,  H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22

Abstract: The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

公开(公告)号：US20190067564A1

公开(公告)日：2019-02-28

申请号：US16102522

申请日：2018-08-13

Applicant: IMEC vzw

Inventor： Johan Swerts ,  Kiroubanand Sankaran ,  Tsann Lin ,  Geoffrey Pourtois

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22

Abstract: The disclosed technology generally relates to magnetic memory devices, and more particularly to spin transfer torque magnetic random access memory (STT-MRAM) devices having a magnetic tunnel junction (MTJ), and further relates to methods of fabricating the STT-MRAM devices. In an aspect, a magnetoresistive random access memory (MRAM) device has a magnetic tunnel junction (MTJ). The MTJ includes a magnetic reference layer comprising CoFeB, a magnetic free layer comprising CoFeB, and a barrier layer comprising MgO. The barrier layer is interposed between the magnetic reference layer and the magnetic free layer. The barrier layer has a thickness adapted to tunnel electrons between the magnetic reference layer and the magnetic free layer sufficient to cause a change in the magnetization direction of the variable magnetization under a bias. The MTJ further comprises a buffer layer comprising one or more of Co, Fe, CoFe and CoFeB, where the buffer layer is doped with one or both of C and N.

公开(公告)号：US20190189915A1

公开(公告)日：2019-06-20

申请号：US16206855

申请日：2018-11-30

Applicant: IMEC vzw

Inventor： Tsann Lin ,  Johan Swerts

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03K19/18 ,  H03K19/23

Abstract: The disclosed technology generally relates semiconductor devices, and relates more particularly to a spin transfer torque device, a method of operating the spin-transfer torque device and a method of fabricating the spin-transfer torque device. According to one aspect, a spin-transfer torque device includes a magnetic flux guide layer and a set of magnetic tunnel junction (MTJ) pillars arranged above the magnetic flux guide layer. Each one of the pillars includes a separate free layer, a separate tunnel barrier layer and a separate reference layer. A coupling layer is arranged between the magnetic flux guide layer and the MTJ pillars, wherein a magnetization of the separate free layer of each of the each of the MTJ pillars is coupled, parallel or antiparallel, to a magnetization of the magnetic flux guide layer through the coupling layer.

公开(公告)号：US20190088713A1

公开(公告)日：2019-03-21

申请号：US16137336

申请日：2018-09-20

Applicant: IMEC vzw

Inventor： Johan Swerts

IPC: H01L27/22 ,  H01L43/10

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: The disclosed technology generally relates to magnetic devices, and more particular to a magnetic structure, and a magnetic tunnel junction device and a magnetic random access memory including the magnetic structure. According to an aspect, a magnetic structure for a magnetic tunnel junction (MTJ) device includes a free layer, a tunnel barrier layer, a reference layer, a hard magnetic layer, and an inter-layer stack arranged between the hard magnetic layer and the reference layer. The inter-layer stack includes a first ferromagnetic sub-layer, a second ferromagnetic sub-layer and a non-magnetic spacer sub-layer. The non-magnetic spacer sub-layer is arranged in contact with and between the first ferromagnetic sub-layer and the second ferromagnetic sub-layer and is adapted to provide a ferromagnetic coupling of a magnetization of the first ferromagnetic sub-layer and a magnetization of the second ferromagnetic sub-layer. A magnetization direction of the reference layer is fixed by the hard magnetic layer and the inter-layer stack.

公开(公告)号：US20180123031A1

公开(公告)日：2018-05-03

申请号：US15801213

申请日：2017-11-01

Applicant: IMEC VZW

Inventor： Hanns Christoph Adelmann ,  Gouri Sankar Kar ,  Johan Swerts ,  Sebastien Couet

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22

Abstract: The disclosed technology generally relates to semiconductor devices and more particularly to semiconductor devices comprising a magnetic tunnel junction (MTJ). In an aspect, a method of forming a magnetoresistive random access memory (MRAM) includes forming a layer stack above a substrate, where the layer stack includes a ferromagnetic reference layer, a tunnel barrier layer and a ferromagnetic free layer and a spin-orbit-torque (SOT)-generating layer. The method additionally includes, subsequent to forming the layer stack, patterning the layer stack to form a MTJ pillar.

公开(公告)号：US11810702B2

公开(公告)日：2023-11-07

申请号：US17115578

申请日：2020-12-08

Applicant: IMEC vzw

Inventor： Robert Carpenter ,  Johan Swerts

IPC: H01F10/32 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: H01F10/3254 ,  G11C11/161 ,  H01F10/3272 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: The disclosed technology relates generally to the field of magnetic devices, in particular to magnetic memory devices or logic devices. The disclosed technology presents a magnetic structure for a magnetic device, wherein the magnetic structure comprises a magnetic reference layer (RL); a spacer provided on the magnetic RL, the spacer comprising a first texture breaking layer provided on the magnetic RL, a magnetic bridge layer provided on the first texture breaking layer, and a second texture breaking layer provided on the magnetic bridge layer. Further, the magnetic structure comprising a magnetic pinned layer (PL) or hard layer (HL) provided on the spacer, wherein the magnetic RL and the magnetic PL or HL are magnetically coupled across the spacer through direct exchange interaction.

公开(公告)号：US11585874B2

公开(公告)日：2023-02-21

申请号：US16855403

申请日：2020-04-22

Applicant: IMEC vzw

Inventor： Johan Swerts ,  Kevin Garello

IPC: G01R33/09 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: The disclosed technology relates generally to semiconductor devices and more particularly to magnetic tunnel junction devices. According to an aspect, an MTJ device comprises a spin-orbit-torque (SOT)-layer. The MTJ device additionally comprises a first free layer, a second free layer, a reference layer and a tunnel barrier layer arranged between the second free layer and the reference layer. The MTJ device further comprises a spacer layer arranged as an interfacial layer between the first free layer and the second free layer. The SOT-layer is adapted to switch a magnetization direction of the first free layer through SOT. The first free layer is adapted to generate a magnetic stray field acting on the second free layer such that a magnetization direction of the second free layer is responsive to a magnetization direction of the first free layer. According to another aspect, a circuit comprises the MTJ device.

公开(公告)号：US10325710B2

公开(公告)日：2019-06-18

申请号：US15860478

申请日：2018-01-02

Applicant: IMEC VZW

Inventor： Johan Swerts ,  Sebastien Couet

IPC: G11B5/39 ,  H01F10/30 ,  H01F10/13 ,  H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22

Abstract: The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

公开(公告)号：US20170179373A1

公开(公告)日：2017-06-22

申请号：US15387350

申请日：2016-12-21

Applicant: IMEC VZW

Inventor： Johan Swerts ,  Mauricio MANFRINI ,  Christoph ADELMANN

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H03K19/18 ,  H03K19/23

Abstract: The disclosed technology relates generally to magnetic devices, and more particularly to spin torque majority gate devices such as spin torque magnetic devices (STMG), and to methods of fabricating the same. In one aspect, a majority gate device includes a plurality of input zones and an output zone. A magnetic tunneling junction (MTJ) is formed in each of the input zones and the output zone, where the MTJ includes a non-magnetic layer interposed between a free layer stack and a hard layer. The free layer stack in turn includes a bulk perpendicular magnetic anisotropy (PMA) layer on a seed layer, a magnetic layer formed on and in contact with the bulk PMA layer, and a non-magnetic layer formed on the magnetic layer. Each of the bulk PMA layer and the seed layer is configured as a common layer for each of the input zones and the output zone.