Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the semiconductor device
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Application No.: US16972413Application Date: 2019-05-31
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Publication No.: US11600489B2Publication Date: 2023-03-07
- Inventor: Shunpei Yamazaki , Tetsuya Kakehata , Yuji Egi , Yasuhiro Jinbo , Yujiro Sakurada
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JPJP2018-110087 20180608
- International Application: PCT/IB2019/054507 WO 20190531
- International Announcement: WO2019/234561 WO 20191212
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L29/51 ; H01L21/8234
Abstract:
A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.
Public/Granted literature
- US20210233769A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2021-07-29
Information query
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