公开(公告)号：US11600489B2

公开(公告)日：2023-03-07

申请号：US16972413

申请日：2019-05-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Yuji Egi ,  Yasuhiro Jinbo ,  Yujiro Sakurada

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/51 ,  H01L21/8234

Abstract: A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.