公开(公告)号：US12094979B2

公开(公告)日：2024-09-17

申请号：US17285401

申请日：2019-10-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yasuhiro Jinbo ,  Jun Ishikawa ,  Sachiaki Tezuka ,  Tetsuya Kakehata

IPC: H01L29/00 ,  H01L21/02 ,  H01L21/768 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76826 ,  H01L29/66742

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.

公开(公告)号：US10985278B2

公开(公告)日：2021-04-20

申请号：US15211160

申请日：2016-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuya Kakehata

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66

Abstract: An insulator is formed over a substrate, an opening is formed in the insulator, and an oxide semiconductor is formed in the opening. Then, part of the insulator is removed to expose a side surface of the oxide semiconductor.

公开(公告)号：US12218247B2

公开(公告)日：2025-02-04

申请号：US17606830

申请日：2020-04-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Ryota Hodo ,  Tetsuya Kakehata ,  Shinya Sasagawa

IPC: H01L29/786 ,  H01L21/311 ,  H01L21/321 ,  H01L21/465 ,  H01L21/66 ,  H01L21/822 ,  H01L27/06 ,  H01L27/12 ,  H01L29/66 ,  H10B12/00 ,  H10B41/70

Abstract: A transistor with a high on-state current and a semiconductor device with high productivity are provided. Included are a first oxide, a second oxide, a third oxide, and a fourth oxide over a first insulator; a first conductor over the third oxide; a second conductor over the fourth oxide; a second insulator over the first conductor; a third insulator over the second conductor; a fifth oxide positioned over the second oxide and between the third oxide and the fourth oxide; a sixth oxide over the fifth oxide; a fourth insulator over the sixth oxide; a third conductor over the fourth insulator; and a fifth insulator over the first insulator to the third insulator. The fifth oxide includes a region in contact with the second oxide to the fourth oxide and the first insulator. The sixth oxide includes a region in contact with the fifth oxide, the first conductor, and the second conductor. The fourth insulator includes a region in contact with at least the sixth oxide, the third conductor, and the fifth insulator.

公开(公告)号：US12136663B2

公开(公告)日：2024-11-05

申请号：US17437143

申请日：2020-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Yuichi Sato ,  Atsushi Shibazaki ,  Kazuki Tanemura ,  Takashi Hirose

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8258 ,  H01L27/06

Abstract: A semiconductor device with little variation in transistor characteristics is provided. First to third oxide films, a first conductive film, a first insulating film, and a second conductive film are sequentially formed. Shaping them into island-like shapes. An insulator is formed over the island-like shapes and an opening is formed in the insulator and a part of the island-like shapes. Another oxide film, a gate insulating film, and a gate electrode are formed in the opening in this order to form the transistor.

公开(公告)号：US12057508B2

公开(公告)日：2024-08-06

申请号：US17436136

申请日：2020-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Shinya Sasagawa ,  Shunichi Ito ,  Erika Takahashi ,  Tetsuya Kakehata

IPC: H01L29/786 ,  H10B12/00

CPC classification number: H01L29/786 ,  H10B12/00 ,  H01L29/78603 ,  H01L29/7869

Abstract: A semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; first and second conductors and a third oxide over the second oxide; a second insulator over the first conductor; a third insulator over the second conductor; first and second layers; and fourth to sixth insulators. The sixth insulator includes a region in contact with a top surface of the first insulator. The first layer includes a region in contact with side surfaces of the first and second oxides, a side surface of the first conductor, and the top surface of the first insulator. The second layer includes a region in contact with the side surfaces of the first and second oxides, a side surface of the second conductor, and the top surface of the first insulator.

公开(公告)号：US11600489B2

公开(公告)日：2023-03-07

申请号：US16972413

申请日：2019-05-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Yuji Egi ,  Yasuhiro Jinbo ,  Yujiro Sakurada

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/51 ,  H01L21/8234

Abstract: A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.

公开(公告)号：US12283632B2

公开(公告)日：2025-04-22

申请号：US17608189

申请日：2020-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Yoshinori Ando ,  Tetsuya Kakehata ,  Yuichi Sato ,  Ryota Hodo

IPC: H01L29/786 ,  H01L29/66 ,  H10B12/00

Abstract: A semiconductor device with less variations in transistor characteristics is provided. The semiconductor device includes: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer which are in contact with a side surface of the first oxide; a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor; a third insulator over the second insulator; a second oxide between the first conductor and the second conductor and over the first oxide; a fourth insulator over the second oxide; and a third conductor over the fourth insulator. Each of the first layer and the second layer includes a metal contained in the first conductor and the second conductor. The first insulator in a region in contact with the second insulator includes a region where a concentration of the metal is lower than that of the first layer or the second layer.

公开(公告)号：US11705524B2

公开(公告)日：2023-07-18

申请号：US17048255

申请日：2019-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuya Kakehata ,  Yuta Endo

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648

Abstract: A semiconductor device with high on-state current and high reliability is provided. The semiconductor device includes first to fifth insulators, first to third oxides, and first to fourth conductors; the fifth insulator includes an opening in which the second oxide is exposed; the third oxide is placed in contact with a bottom portion of the opening and a side portion of the opening; the second insulator is placed in contact with the third oxide; the third conductor is provided in contact with the second insulator; the third insulator is placed in contact with a top surface of the third conductor and the second insulator; and the fourth conductor is in contact with the third insulator and the top surface of the third conductor and placed in the opening.

公开(公告)号：US11508850B2

公开(公告)日：2022-11-22

申请号：US17271716

申请日：2019-08-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Naoki Okuno ,  Tetsuya Kakehata ,  Hiroki Komagata ,  Yuji Egi

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

公开(公告)号：US09184173B2

公开(公告)日：2015-11-10

申请号：US14043062

申请日：2013-10-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tamae Takano ,  Tetsuya Kakehata ,  Shunpei Yamazaki

IPC: H01L29/792 ,  H01L27/115 ,  H01L27/105 ,  H01L27/12 ,  H01L27/13 ,  H01L29/423

CPC classification number: H01L27/1157 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/13 ,  H01L29/4234 ,  H01L29/792 ,  H01L29/7923

Abstract: The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process.