Invention Grant
- Patent Title: Method for manufacturing a monocrystalline piezoelectric layer
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Application No.: US16064420Application Date: 2016-12-21
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Publication No.: US11600766B2Publication Date: 2023-03-07
- Inventor: Bruno Ghyselen , Ionut Radu , Jean-Marc Bethoux
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1563057 20151222
- International Application: PCT/EP2016/082259 WO 20161221
- International Announcement: WO2017/109005 WO 20170629
- Main IPC: H01L41/312
- IPC: H01L41/312 ; H01L41/319 ; H03H3/02 ; H01L41/187 ; C30B25/18 ; C30B29/22 ; H01L41/08 ; H01L41/09 ; H01L41/335 ; H03H3/08 ; H03H9/25 ; H03H9/54 ; H03H9/64 ; H01L41/316 ; C30B29/30

Abstract:
A method for manufacturing a monocrystalline piezoelectric material layer includes providing a donor substrate made of the piezoelectric material, providing a receiving substrate, transferring a so-called “seed layer” of the donor substrate onto the receiving substrate, and using epitaxy of the piezoelectric material on the seed layer until the desired thickness for the monocrystalline piezoelectric layer is obtained.
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