Invention Grant
- Patent Title: Semiconductor device and method of forming same
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Application No.: US17186293Application Date: 2021-02-26
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Publication No.: US11605635B2Publication Date: 2023-03-14
- Inventor: Szu-Ying Chen , Sen-Hong Syue , Li-Ting Wang , Huicheng Chang , Yee-Chia Yeo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/76 ; H01L31/113 ; H01L27/092 ; H01L21/8234 ; H01L29/78 ; H01L29/66 ; H01L29/06

Abstract:
In an embodiment, a method includes forming a plurality of fins adjacent to a substrate, the plurality of fins comprising a first fin, a second fin, and a third fin; forming a first insulation material adjacent to the plurality of fins; reducing a thickness of the first insulation material; after reducing the thickness of the first insulation material, forming a second insulation material adjacent to the first insulation material and the plurality of fins; and recessing the first insulation material and the second insulation material to form a first shallow trench isolation (STI) region.
Public/Granted literature
- US20220278097A1 Semiconductor Device and Method of Forming Same Public/Granted day:2022-09-01
Information query
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