Invention Grant
- Patent Title: Emitter package for a photoacoustic sensor
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Application No.: US16951365Application Date: 2020-11-18
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Publication No.: US11609180B2Publication Date: 2023-03-21
- Inventor: Siyuan Qi , Joachim Eder , Christoph Glacer , Dominic Maier , Mark Pavier
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: EP19215002 20191210
- Main IPC: G01N21/17
- IPC: G01N21/17 ; B81B3/00 ; B81B7/00 ; B81C1/00

Abstract:
The present disclosure concerns an emitter package for a photoacoustic sensor, the emitter package comprising a MEMS infrared radiation source for emitting pulsed infrared radiation in a first wavelength range. The MEMS infrared radiation source may be arranged on a substrate. The emitter package may further comprise a rigid wall structure being arranged on the substrate and laterally surrounding a periphery of the MEMS infrared radiation source. The emitter package may further comprise a lid structure being attached to the rigid wall structure, the lid structure comprising a filter structure for filtering the infrared radiation emitted from the MEMS infrared radiation source and for providing a filtered infrared radiation in a reduced second wavelength range.
Public/Granted literature
- US20210172862A1 Emitter Package for a Photoacoustic Sensor Public/Granted day:2021-06-10
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