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US11626185B2 Semiconductor memory devices, memory systems, and methods of operating semiconductor memory devices 有权

Semiconductor memory devices, memory systems, and methods of operating semiconductor memory devices
摘要：
A method includes replacing an address of a first normal memory cell in a first column of a first memory block with a destination address that is an address of a second normal memory cell in a second column of the first memory block, and reassigning the address of the second normal memory cell in the second column of the first memory block to an address of a first redundancy memory cell in a redundancy block of the memory device.
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