Invention Grant
- Patent Title: Low temperature deposition of iridium containing films
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Application No.: US16129232Application Date: 2018-09-12
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Publication No.: US11643721B2Publication Date: 2023-05-09
- Inventor: Feng Q. Liu , Hua Chung , Schubert Chu , Mei Chang , Jeffrey W. Anthis , David Thompson
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/42
- IPC: C23C16/42 ; C23C16/513 ; C23C16/455 ; C23C16/52 ; C23C16/507 ; C23C16/14
Abstract:
Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.
Public/Granted literature
- US20190078203A1 Low Temperature Deposition Of Iridium Containing Films Public/Granted day:2019-03-14
Information query
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