Invention Grant
- Patent Title: Metal oxide film and method for forming metal oxide film
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Application No.: US17144550Application Date: 2021-01-08
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Publication No.: US11652110B2Publication Date: 2023-05-16
- Inventor: Masahiro Takahashi , Takuya Hirohashi , Masashi Tsubuku , Noritaka Ishihara , Masashi Oota
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP 12245992 2012.11.08 JP 13016242 2013.01.30 JP 13056768 2013.03.19
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/04 ; H01L21/66 ; H01L29/24 ; G02F1/1368 ; G01N23/207 ; H01L29/66 ; C23C14/08 ; H01L29/786 ; H01L21/02
Abstract:
A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.
Public/Granted literature
- US20210225887A1 METAL OXIDE FILM AND METHOD FOR FORMING METAL OXIDE FILM Public/Granted day:2021-07-22
Information query
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