A semiconductor device, the device comprising: a first silicon layer comprising first single crystal silicon; an isolation layer disposed over said first silicon layer; a first metal layer disposed over said isolation layer; a second metal layer disposed over said first metal layer; a first level comprising a plurality of transistors, said first level disposed over said second metal layer, wherein said isolation layer comprises an oxide to oxide bond surface, wherein said plurality of transistors comprise a second single crystal silicon region; and a plurality of capacitors, wherein said plurality of capacitors comprise functioning as a decoupling capacitor to mitigate power supply noise.