Invention Grant
- Patent Title: Method of fabricating semiconductor device
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Application No.: US17584545Application Date: 2022-01-26
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Publication No.: US11688813B2Publication Date: 2023-06-27
- Inventor: Seung Mo Kang , Moon Seung Yang , Jongryeol Yoo , Sihyung Lee , Sunguk Jang , Eunhye Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR 20190062553 2019.05.28
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/08 ; H01L29/423 ; H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L27/088 ; H01L21/8234 ; H01L21/311 ; H01L21/02 ; H01L21/324

Abstract:
A semiconductor device includes a channel pattern including first and second semiconductor patterns stacked on a substrate, a gate electrode covering top and lateral surfaces of the channel pattern and extending in a first direction, and including a first gate segment between the first semiconductor pattern and the second semiconductor pattern, a gate spacer covering a lateral surface of the gate electrode and including an opening exposing the channel pattern, and a first source/drain pattern on a side of the gate spacer and in contact with the channel pattern through the opening, the first source/drain pattern including a sidewall center thickness at a height of the first gate segment and at a center of the opening, and a sidewall edge thickness at the height of the first gate segment and at an edge of the opening, the sidewall edge thickness being about 0.7 to 1 times the sidewall center thickness.
Public/Granted literature
- US20220149210A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2022-05-12
Information query
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