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公开(公告)号：US20240194768A1
公开(公告)日：2024-06-13
申请号：US18533262
申请日：2023-12-08
发明人： Gilhwan Son , Taegon Kim , Sihyung Lee , Jihye Yi
IPC分类号： H01L29/66 , H01L21/8234 , H01L27/088 , H01L29/20 , H01L29/78
CPC分类号： H01L29/66795 , H01L21/823431 , H01L27/0886 , H01L29/2003 , H01L29/66545 , H01L29/6656 , H01L29/785
摘要： A method of manufacturing an integrated circuit device includes forming a preliminary channel stack, which includes sacrificial layers and channel layers, on a substrate, forming a preliminary channel pattern and a fin-type active region by removing a portion of the preliminary channel stack and a portion of the substrate to define a buried trench, forming a sacrificial buried layer in the buried trench, forming a source/drain region on the fin-type active region, forming, on the sacrificial buried layer, a power via electrically connected to the source/drain region, removing a portion of the substrate to expose a bottom surface of the sacrificial buried layer, removing the sacrificial buried layer and forming, in the buried trench, a backside buried wiring layer connected to the power via, and forming a backside wiring structure electrically connected to the backside buried wiring layer.
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公开(公告)号：US11735632B2
公开(公告)日：2023-08-22
申请号：US17546690
申请日：2021-12-09
发明人： Seokhoon Kim , Dongmyoung Kim , Kanghun Moon , Hyunkwan Yu , Sanggil Lee , Seunghun Lee , Sihyung Lee , Choeun Lee , Edward Namkyu Cho , Yang Xu
IPC分类号： H01L29/08 , H01L29/78 , H01L27/088 , H01L29/06
CPC分类号： H01L29/0847 , H01L27/0886 , H01L29/0653 , H01L29/0673 , H01L29/785 , H01L29/7853
摘要： A semiconductor device includes a substrate, a fin structure on the substrate, a gate structure on the fin structure, a gate spacer on at least on side surface of the gate structure, and a source/drain structure on the fin structure, wherein a topmost portion of a bottom surface of the gate spacer is lower than a topmost portion of a top surface of the fin structure, and a topmost portion of a top surface of the source/drain structure is lower than the topmost portion of the top surface of the fin structure.
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公开(公告)号：US20200381546A1
公开(公告)日：2020-12-03
申请号：US16732864
申请日：2020-01-02
发明人： Youngdae Cho , Sunguk Jang , Sujin Jung , Jungtaek Kim , Sihyung Lee
IPC分类号： H01L29/78 , H01L29/423
摘要： A semiconductor device may include semiconductor patterns, a gate structure, a first spacer, a first semiconductor layer and a second semiconductor layer. The semiconductor patterns may be formed on a substrate, and may be spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate and may overlap in the vertical direction. The gate structure may be formed on the substrate and the semiconductor patterns. At least portion of the gate structure may be formed vertically between the semiconductor patterns. The first spacer may cover opposite sidewalls of the gate structure, the sidewalls opposite to each other in a first direction. The first semiconductor layer may cover the sidewalls of the semiconductor patterns in the first direction, and surfaces of the first spacer and the substrate. The first semiconductor layer may have a first concentration of impurities. The second semiconductor layer may be formed on the first semiconductor layer, and may have a second concentration of impurities different from the first concentration of impurities. The semiconductor device may have good characteristics and high reliability.
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公开(公告)号：US11569350B2
公开(公告)日：2023-01-31
申请号：US17371858
申请日：2021-07-09
发明人： Sanggil Lee , Namkyu Cho , Seokhoon Kim , Kang Hun Moon , Hyun-Kwan Yu , Sihyung Lee
IPC分类号： H01L29/08 , H01L29/06 , H01L29/78 , H01L29/66 , H01L21/762
摘要： Disclosed is a semiconductor device including a first active pattern that extends in a first direction on an active region of a substrate, a first source/drain pattern in a recess on an upper portion of the first active pattern, a gate electrode that runs across a first channel pattern on the upper portion of the first active pattern and extends in a second direction intersecting the first direction, and an active contact electrically connected to the first source/drain pattern.
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公开(公告)号：US20220085202A1
公开(公告)日：2022-03-17
申请号：US17533499
申请日：2021-11-23
发明人： Youngdae Cho , Sunguk Jang , Sujin Jung , Jungtaek Kim , Sihyung Lee
IPC分类号： H01L29/78 , H01L29/423
摘要： A semiconductor device may include semiconductor patterns, a gate structure, a first spacer, a first semiconductor layer and a second semiconductor layer. The semiconductor patterns may be formed on a substrate, and may be spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate and may overlap in the vertical direction. The gate structure may be formed on the substrate and the semiconductor patterns. At least portion of the gate structure may be formed vertically between the semiconductor patterns. The first spacer may cover opposite sidewalls of the gate structure, the sidewalls opposite to each other in a first direction. The first semiconductor layer may cover the sidewalls of the semiconductor patterns in the first direction, and surfaces of the first spacer and the substrate. The first semiconductor layer may have a first concentration of impurities. The second semiconductor layer may be formed on the first semiconductor layer, and may have a second concentration of impurities different from the first concentration of impurities. The semiconductor device may have good characteristics and high reliability.
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公开(公告)号：US11251313B2
公开(公告)日：2022-02-15
申请号：US16774653
申请日：2020-01-28
发明人： Seung Mo Kang , Moon Seung Yang , Jongryeol Yoo , Sihyung Lee , Sunguk Jang , Eunhye Choi
IPC分类号： H01L29/786 , H01L29/423 , H01L29/08 , H01L29/06 , H01L29/66 , H01L29/78 , H01L27/088 , H01L21/8234 , H01L21/311
摘要： A semiconductor device includes a channel pattern including first and second semiconductor patterns stacked on a substrate, a gate electrode covering top and lateral surfaces of the channel pattern and extending in a first direction, and including a first gate segment between the first semiconductor pattern and the second semiconductor pattern, a gate spacer covering a lateral surface of the gate electrode and including an opening exposing the channel pattern, and a first source/drain pattern on a side of the gate spacer and in contact with the channel pattern through the opening, the first source/drain pattern including a sidewall center thickness at a height of the first gate segment and at a center of the opening, and a sidewall edge thickness at the height of the first gate segment and at an edge of the opening, the sidewall edge thickness being about 0.7 to 1 times the sidewall center thickness.
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公开(公告)号：US11217667B2
公开(公告)日：2022-01-04
申请号：US16806629
申请日：2020-03-02
发明人： Seokhoon Kim , Dongmyoung Kim , Kanghun Moon , Hyunkwan Yu , Sanggil Lee , Seunghun Lee , Sihyung Lee , Choeun Lee , Edward Namkyu Cho , Yang Xu
IPC分类号： H01L29/08 , H01L29/78 , H01L27/088 , H01L29/06
摘要： A semiconductor device includes a substrate, a fin structure on the substrate, a gate structure on the fin structure, a gate spacer on at least on side surface of the gate structure, and a source/drain structure on the fin structure, wherein a topmost portion of a bottom surface of the gate spacer is lower than a topmost portion of a top surface of the fin structure, and a topmost portion of a top surface of the source/drain structure is lower than the topmost portion of the top surface of the fin structure.
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公开(公告)号：US11195954B2
公开(公告)日：2021-12-07
申请号：US16732864
申请日：2020-01-02
发明人： Youngdae Cho , Sunguk Jang , Sujin Jung , Jungtaek Kim , Sihyung Lee
IPC分类号： H01L29/78 , H01L29/423
摘要： A semiconductor device may include semiconductor patterns, a gate structure, a first spacer, a first semiconductor layer and a second semiconductor layer. The semiconductor patterns may be formed on a substrate, and may be spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate and may overlap in the vertical direction. The gate structure may be formed on the substrate and the semiconductor patterns. At least portion of the gate structure may be formed vertically between the semiconductor patterns. The first spacer may cover opposite sidewalls of the gate structure, the sidewalls opposite to each other in a first direction. The first semiconductor layer may cover the sidewalls of the semiconductor patterns in the first direction, and surfaces of the first spacer and the substrate. The first semiconductor layer may have a first concentration of impurities. The second semiconductor layer may be formed on the first semiconductor layer, and may have a second concentration of impurities different from the first concentration of impurities. The semiconductor device may have good characteristics and high reliability.
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公开(公告)号：US11069776B2
公开(公告)日：2021-07-20
申请号：US16789498
申请日：2020-02-13
发明人： Sanggil Lee , Namkyu Cho , Seokhoon Kim , Kang Hun Moon , Hyun-Kwan Yu , Sihyung Lee
IPC分类号： H01L29/08 , H01L29/06 , H01L29/78 , H01L29/66 , H01L21/762
摘要： Disclosed is a semiconductor device including a first active pattern that extends in a first direction on an active region of a substrate, a first source/drain pattern in a recess on an upper portion of the first active pattern, a gate electrode that runs across a first channel pattern on the upper portion of the first active pattern and extends in a second direction intersecting the first direction, and an active contact electrically connected to the first source/drain pattern.
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公开(公告)号：US10853922B2
公开(公告)日：2020-12-01
申请号：US15902666
申请日：2018-02-22
发明人： Sihyung Lee , Dongjae Kim , Jae Wook Nam , Wooram Hong
摘要： A method for correcting an image includes: orthographically correcting an image; removing a curtain artifact by applying a first filter to the orthographically corrected image; correcting brightness of the image, from which the curtain artifact is removed, by applying a second filter to the image, from which the curtain artifact is removed. The first filter includes a first function and a second function for a first domain and a second domain, which are orthogonal to each other in a frequency region, and the first filter is differentiable and continuous in the first domain and the second domain.
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