- 专利标题： Three dimensional memory and methods of forming the same
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申请号： US17129146申请日： 2020-12-21
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公开(公告)号： US11700730B2公开(公告)日： 2023-07-11
- 发明人: Sanh D. Tang , John K. Zahurak
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman Lundberg & Woessner, P.A.
- 分案原申请号： US12825211 2010.06.28
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11551 ; H10B43/27 ; H01L21/28 ; H01L27/06 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; H10B41/10 ; H10B41/20 ; H10B41/27 ; H10B41/50 ; H10B43/10 ; H10B43/20 ; H10B43/50 ; H10B63/00 ; H01L21/768 ; G11C13/00 ; G11C16/10 ; G11C16/14 ; G11C16/26 ; H01L23/528 ; H10N70/20
摘要：
Some embodiments include a memory device and methods of forming the memory device. One such memory device includes a first group of memory cells, each of the memory cells of the first group being formed in a cavity of a first control gate located in one device level of the memory device. The memory device also includes a second group of memory cells, each of the memory cells of the second group being formed in a cavity of a second control gate located in another device level of the memory device. Additional apparatus and methods are described.
公开/授权文献
- US20210183887A1 THREE DIMENSIONAL MEMORY AND METHODS OF FORMING THE SAME 公开/授权日：2021-06-17
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