Invention Grant
- Patent Title: Three dimensional memory and methods of forming the same
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Application No.: US17129146Application Date: 2020-12-21
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Publication No.: US11700730B2Publication Date: 2023-07-11
- Inventor: Sanh D. Tang , John K. Zahurak
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- The original application number of the division: US12825211 2010.06.28
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11551 ; H10B43/27 ; H01L21/28 ; H01L27/06 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; H10B41/10 ; H10B41/20 ; H10B41/27 ; H10B41/50 ; H10B43/10 ; H10B43/20 ; H10B43/50 ; H10B63/00 ; H01L21/768 ; G11C13/00 ; G11C16/10 ; G11C16/14 ; G11C16/26 ; H01L23/528 ; H10N70/20
Abstract:
Some embodiments include a memory device and methods of forming the memory device. One such memory device includes a first group of memory cells, each of the memory cells of the first group being formed in a cavity of a first control gate located in one device level of the memory device. The memory device also includes a second group of memory cells, each of the memory cells of the second group being formed in a cavity of a second control gate located in another device level of the memory device. Additional apparatus and methods are described.
Public/Granted literature
- US20210183887A1 THREE DIMENSIONAL MEMORY AND METHODS OF FORMING THE SAME Public/Granted day:2021-06-17
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