Invention Grant
- Patent Title: Drain sharing split LNA
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Application No.: US17965056Application Date: 2022-10-13
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Publication No.: US11705873B2Publication Date: 2023-07-18
- Inventor: Miles Sanner , Emre Ayranci
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus & McFarland LLP
- Agent John Land, Esq.
- Main IPC: H03F3/195
- IPC: H03F3/195 ; H03F3/21 ; H03F1/56 ; H03F3/193 ; H03F3/72 ; H03F1/22 ; H03F3/16 ; H03F1/02 ; H04B1/16

Abstract:
A receiver front end having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the gm of the input stage of the amplifier, thus improving the noise figure of the amplifier.
Information query
IPC分类: