Invention Grant
- Patent Title: Post-CMP cleaning and apparatus
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Application No.: US17734314Application Date: 2022-05-02
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Publication No.: US11728157B2Publication Date: 2023-08-15
- Inventor: Fu-Ming Huang , Liang-Guang Chen , Ting-Kui Chang , Chun-Chieh Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- The original application number of the division: US14870946 2015.09.30
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67 ; B08B1/00 ; B08B1/04 ; B08B3/04 ; H01L21/306 ; H01L21/687
Abstract:
A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.
Public/Granted literature
- US20220262620A1 Post-CMP Cleaning and Apparatus Public/Granted day:2022-08-18
Information query
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