公开(公告)号：US11705324B2

公开(公告)日：2023-07-18

申请号：US17306767

申请日：2021-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Hsien Lu ,  Ting-Kui Chang ,  Jung-Tsan Tsai

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/306

CPC classification number: H01L21/02087 ,  H01L21/02057 ,  H01L21/30625 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67219

Abstract: A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

公开(公告)号：US20210257211A1

公开(公告)日：2021-08-19

申请号：US17306767

申请日：2021-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Hsien LU ,  Ting-Kui Chang ,  Jung-Tsan Tsai

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/306

Abstract: A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

公开(公告)号：US20190295842A1

公开(公告)日：2019-09-26

申请号：US16437352

申请日：2019-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Hsien LU ,  Ting-Kui Chang ,  Jung-Tsan Tsai

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67

Abstract: A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

公开(公告)号：US12170195B2

公开(公告)日：2024-12-17

申请号：US18349476

申请日：2023-07-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: H01L21/02 ,  B08B1/12 ,  B08B1/32 ,  B08B3/04 ,  H01L21/306 ,  H01L21/67 ,  H01L21/687

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

公开(公告)号：US11710659B2

公开(公告)日：2023-07-25

申请号：US17646024

申请日：2021-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Chieh Wu ,  Tang-Kuei Chang ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Su-Hao Liu ,  Kuo-Ju Chen ,  Liang-Yin Chen ,  Huicheng Chang ,  Ting-Kui Chang ,  Chia Hsuan Lee

IPC: H01L21/768 ,  H01L23/522 ,  H01L29/66 ,  H01L29/78 ,  H01L23/485 ,  H01L21/3115 ,  H01L23/532

CPC classification number: H01L21/76883 ,  H01L21/76825 ,  H01L23/5226 ,  H01L21/31155 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/485 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/66795 ,  H01L29/785 ,  H01L2029/7858

Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.

公开(公告)号：US20220262620A1

公开(公告)日：2022-08-18

申请号：US17734314

申请日：2022-05-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: H01L21/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  B08B3/04 ,  H01L21/306 ,  H01L21/687

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

公开(公告)号：US20230317519A1

公开(公告)日：2023-10-05

申请号：US18330466

申请日：2023-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Chieh Wu ,  Tang-Kuei Chang ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Su-Hao Liu ,  Kuo-Ju Chen ,  Liang-Yin Chen ,  Huicheng Chang ,  Ting-Kui Chang ,  Chia Hsuan Lee

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76883 ,  H01L21/76825 ,  H01L23/5226 ,  H01L29/66795

Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.

公开(公告)号：US09576789B2

公开(公告)日：2017-02-21

申请号：US13752415

申请日：2013-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Hsien Lu ,  Ting-Kui Chang ,  Jung-Tsan Tsai

IPC: B08B3/00 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02087 ,  H01L21/02057 ,  H01L21/30625 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67219

Abstract: A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

Abstract translation: 晶片清洁装置包括用于晶片的化学机械抛光（CMP）的抛光单元和布置成在晶片的CMP之后将清洁流体引向晶片的远边缘的清洁分配单元。 晶片清洗方法包括通过抛光单元对晶片进行CMP，并且通过清洁分配单元在晶片的CMP之后将清洁流体导向晶片的远边缘。 另一种方法可以包括CMP，施加去离子水和施加pH范围为约2至约13的pH调节剂。

公开(公告)号：US12068195B2

公开(公告)日：2024-08-20

申请号：US18330466

申请日：2023-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Chieh Wu ,  Tang-Kuei Chang ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Su-Hao Liu ,  Kuo-Ju Chen ,  Liang-Yin Chen ,  Huicheng Chang ,  Ting-Kui Chang ,  Chia Hsuan Lee

IPC: H01L21/768 ,  H01L23/522 ,  H01L29/66 ,  H01L29/78 ,  H01L21/3115 ,  H01L23/485 ,  H01L23/532

CPC classification number: H01L21/76883 ,  H01L21/76825 ,  H01L23/5226 ,  H01L21/31155 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/485 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/66795 ,  H01L29/785 ,  H01L2029/7858 ,  H01L2924/00 ,  H01L2924/0002

Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.

公开(公告)号：US20230352295A1

公开(公告)日：2023-11-02

申请号：US18349476

申请日：2023-07-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: H01L21/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  B08B3/04 ,  H01L21/306 ,  H01L21/687

CPC classification number: H01L21/02043 ,  H01L21/67046 ,  B08B1/002 ,  B08B1/04 ,  B08B3/04 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67092 ,  H01L21/687 ,  H01L21/02065 ,  H01L21/02074

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.