公开(公告)号：US20220359277A1

公开(公告)日：2022-11-10

申请号：US17815407

申请日：2022-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Cheng Chen ,  Huicheng Chang ,  Fu-Ming Huang ,  Kei-Wei Chen ,  Liang-Yin Chen ,  Tang-Kuei Chang ,  Yee-Chia Yeo ,  Wei-Wei Liang ,  Ji Cui

IPC: H01L21/768 ,  H01L21/321 ,  H01L23/522 ,  H01L29/78 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535 ,  H01L23/532

Abstract: The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.

公开(公告)号：US11450565B2

公开(公告)日：2022-09-20

申请号：US16997616

申请日：2020-08-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Cheng Chen ,  Huicheng Chang ,  Fu-Ming Huang ,  Kei-Wei Chen ,  Liang-Yin Chen ,  Tang-Kuei Chang ,  Yee-Chia Yeo ,  Wei-Wei Liang ,  Ji Cui

IPC: H01L21/768 ,  H01L21/321 ,  H01L23/522 ,  H01L29/78 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535 ,  H01L23/532

Abstract: The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.

公开(公告)号：US09630295B2

公开(公告)日：2017-04-25

申请号：US13944353

申请日：2013-07-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： He-Hui Peng ,  Fu-Ming Huang ,  Shich-Chang Suen ,  Han-Hsin Kuo ,  Chi-Ming Tsai ,  Liang-Guang Chen

IPC: B24B53/017 ,  H01L21/304 ,  B08B3/02

CPC classification number: B24B53/017 ,  B08B3/02 ,  H01L21/304

Abstract: Embodiments of mechanisms for performing a chemical mechanical polishing (CMP) process are provided. A method for performing a CMP process includes polishing a wafer by using a polishing pad. The method also includes applying a cleaning liquid jet on the polishing pad to condition the polishing pad. A CMP system is also provided.

公开(公告)号：US12172263B2

公开(公告)日：2024-12-24

申请号：US18312753

申请日：2023-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Michael Yen ,  Kao-Feng Liao ,  Hsin-Ying Ho ,  Chun-Wen Hsiao ,  Sheng-Chao Chuang ,  Ting-Hsun Chang ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Peng-Chung Jangjian ,  Ji James Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/26 ,  B24B37/005 ,  B24B37/04 ,  B24B37/24

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

公开(公告)号：US20230352295A1

公开(公告)日：2023-11-02

申请号：US18349476

申请日：2023-07-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: H01L21/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  B08B3/04 ,  H01L21/306 ,  H01L21/687

CPC classification number: H01L21/02043 ,  H01L21/67046 ,  B08B1/002 ,  B08B1/04 ,  B08B3/04 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67092 ,  H01L21/687 ,  H01L21/02065 ,  H01L21/02074

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

公开(公告)号：US11728157B2

公开(公告)日：2023-08-15

申请号：US17734314

申请日：2022-05-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: H01L21/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  B08B3/04 ,  H01L21/306 ,  H01L21/687

CPC classification number: H01L21/02043 ,  B08B1/002 ,  B08B1/04 ,  B08B3/04 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67092 ,  H01L21/687 ,  H01L21/02065 ,  H01L21/02074

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

公开(公告)号：US09370854B2

公开(公告)日：2016-06-21

申请号：US14079008

申请日：2013-11-13

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Han-Hsin Kuo ,  Fu-Ming Huang

IPC: B24B37/34 ,  H01L21/67 ,  H01L21/768

CPC classification number: B24B37/345 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/3212 ,  H01L21/67219 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76883

Abstract: The present disclosure provides a method of fabricating a semiconductor device with metal interconnections and a design of a tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device, the method includes providing a semiconductor substrate, depositing a dielectric layer over the semiconductor substrate, forming at least one trench in the dielectric layer, and forming a metallization layer in the trench and over the dielectric layer. The method further includes performing a chemical mechanical polishing process to planarize the metallization layer and the dielectric layer, performing a surface treatment on the planarized dielectric layer to form a protection layer, cleaning the planarized metallization layer and the treated dielectric layer to remove residue from the chemical mechanical polishing process, and drying the cleaned metallization layer and dielectric layer in an inert gas environment.

Abstract translation: 本公开提供了一种制造具有金属互连的半导体器件的方法和用于执行这种方法的工具的设计。 在一个实施例中，一种制造半导体器件的方法，所述方法包括提供半导体衬底，在所述半导体衬底上沉积介电层，在所述电介质层中形成至少一个沟槽，以及在所述沟槽中形成金属化层 电介质层。 该方法还包括进行化学机械抛光工艺以使金属化层和电介质层平坦化，在平坦化介电层上进行表面处理以形成保护层，清洁平坦化的金属化层和经过处理的电介质层以从 化学机械抛光工艺，并在惰性气体环境中干燥清洁的金属化层和电介质层。

公开(公告)号：US20230364733A1

公开(公告)日：2023-11-16

申请号：US18359396

申请日：2023-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Hsun Chang ,  Hung Yen ,  Chi-Hsiang Shen ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Tsung Hsien Chang ,  Ji Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/16 ,  B24B57/02 ,  B24B37/015 ,  H01L21/306

CPC classification number: B24B37/16 ,  B24B57/02 ,  B24B37/015 ,  H01L21/30625

Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

公开(公告)号：US20230271298A1

公开(公告)日：2023-08-31

申请号：US18312753

申请日：2023-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Michael Yen ,  Kao-Feng Liao ,  Hsin-Ying Ho ,  Chun-Wen Hsiao ,  Sheng-Chao Chuang ,  Ting-Hsun Chang ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Peng-Chung Jangjian ,  Ji James Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/26 ,  B24B37/005 ,  B24B37/24 ,  B24B37/04

CPC classification number: B24B37/26 ,  B24B37/005 ,  B24B37/24 ,  B24B37/042

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

公开(公告)号：US20220262620A1

公开(公告)日：2022-08-18

申请号：US17734314

申请日：2022-05-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: H01L21/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  B08B3/04 ,  H01L21/306 ,  H01L21/687

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.