Invention Grant
- Patent Title: Semiconductor interconnect structures with conductive elements, and associated systems and methods
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Application No.: US17236499Application Date: 2021-04-21
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Publication No.: US11728307B2Publication Date: 2023-08-15
- Inventor: Shams U. Arifeen , Quang Nguyen , Christopher Glancey , Koustav Sinha , Chan H. Yoo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
Semiconductor devices having interconnect structures with conductive elements configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a pillar structure coupled to the semiconductor die. The pillar structure can include a plurality of conductive elements made of a first conductive material having a first elastic modulus. The pillar structure can further include a continuous region of a second conductive material at least partially surrounding the plurality of conductive elements. The second conductive material can have a second elastic modulus less than the first elastic modulus.
Public/Granted literature
- US20220344295A1 SEMICONDUCTOR INTERCONNECT STRUCTURES WITH CONDUCTIVE ELEMENTS, AND ASSOCIATED SYSTEMS AND METHODS Public/Granted day:2022-10-27
Information query
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