A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the first oxide layer therebetween. The first oxide layer includes an oxide of a first material and may have a thickness of 0.3 Å to 2.0 Å. The second oxide layer may include an oxide of a second material and may have a thickness of 0.1 Å to 5.0 Å. A first oxygen affinity of the first material may be greater than a second oxygen affinity of the second material.