Invention Grant
- Patent Title: Contact plugs for semiconductor device
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Application No.: US17101158Application Date: 2020-11-23
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Publication No.: US11756864B2Publication Date: 2023-09-12
- Inventor: Mrunal A Khaderbad , Yasutoshi Okuno , Sung-Li Wang , Pang-Yen Tsai , Shen-Nan Lee , Teng-Chun Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/485 ; H01L21/768 ; H01L29/66 ; H01L21/311 ; H01L21/02 ; H01L21/285 ; H01L29/417 ; H01L29/78 ; H01L21/8234 ; H01L29/45 ; H01L21/8238 ; H01L23/532 ; H01L23/528 ; H01L29/08 ; H01L29/41
Abstract:
A semiconductor device and a method of forming the same are provided. A method includes forming a gate over a semiconductor structure. An epitaxial source/drain region is formed adjacent the gate. A dielectric layer is formed over the epitaxial source/drain region. An opening extending through the dielectric layer and exposing the epitaxial source/drain region is formed. A conductive material is non-conformally deposited in the opening. The conductive material fills the opening in a bottom-up manner.
Public/Granted literature
- US20210104431A1 CONTACT PLUGS FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME Public/Granted day:2021-04-08
Information query
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