Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17184511Application Date: 2021-02-24
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Publication No.: US11756918B2Publication Date: 2023-09-12
- Inventor: Tsutomu Sano , Kazuya Maruyama , Satoru Takaku , Nobuhito Suzuya
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 20043946 2020.03.13
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00

Abstract:
A semiconductor device includes a first terminal, a second terminal, and a plurality of third terminals on a substrate. Memory chips are stacked on the substrate in an offset manner. Each memory chip has first pads, second pads, and third pads thereon. A first bonding wire is electrically connected to the first terminal and physically connected to a first pad of each memory chip. A second bonding wire is electrically connected to the second terminal and physically connected to a second pad of each memory chip. A third bonding wire electrically connects one third terminal to a third pad on each memory chip. A fourth bonding wire is connected to the first bonding wire at a first pad on a first memory chip of the stack and another first pad on the first memory chip. The fourth bonding wire straddles over the second bonding wire and the third bonding wire.
Public/Granted literature
- US20210288018A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-09-16
Information query
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