公开(公告)号：US12002686B2

公开(公告)日：2024-06-04

申请号：US17004202

申请日：2020-08-27

Applicant: KIOXIA CORPORATION

Inventor： Satoshi Tsukiyama ,  Satoru Takaku ,  Yuki Sugo ,  Ayana Amano

IPC: H01L25/065 ,  H01L21/50 ,  H01L23/16 ,  H01L21/603 ,  H01L23/29 ,  H01L23/31 ,  H01L25/00

CPC classification number: H01L21/50 ,  H01L23/16 ,  H01L25/0657 ,  H01L21/603 ,  H01L23/295 ,  H01L23/3142 ,  H01L25/50

Abstract: A semiconductor device includes a substrate, a first adhesive layer, a first semiconductor chip, and a second adhesive layer. The first adhesive layer is provided above a first surface of the substrate and includes a plurality of types of resins having different molecular weights and a filler. The first semiconductor chip is provided above the first adhesive layer. The second adhesive layer is provided in at least a part of a first region between the substrate and the first adhesive layer, and the second adhesive layer includes at least one type of resins among the plurality of types of resins having a molecular weight smaller than a molecular weight of other types of resins among the plurality of types of resins, and a filler having a lower concentration than that of the first adhesive layer.

公开(公告)号：US11139275B2

公开(公告)日：2021-10-05

申请号：US16799004

申请日：2020-02-24

Applicant: KIOXIA CORPORATION

Inventor： Satoru Takaku

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/31

Abstract: According to one embodiment, a semiconductor device includes a wiring board having a first surface. A first element is disposed on the first surface of the wiring board. A first resin layer covers the first element. A second element is larger than the first element and disposed on the first resin layer. The second element is superposed above the first element. A reinforcement member is disposed at a peripheral portion of the first resin layer and includes an edge disposed inside of the first resin layer. The reinforcement member has an upper surface above the first surface of the wiring board. The reinforcement member has a coefficient of linear expansion lower than the first resin layer. An encapsulating resin material, over the first surface of the wiring board, covers the first element, the second element, the first resin layer, and the reinforcement member.

公开(公告)号：US11756918B2

公开(公告)日：2023-09-12

申请号：US17184511

申请日：2021-02-24

Applicant: KIOXIA CORPORATION

Inventor： Tsutomu Sano ,  Kazuya Maruyama ,  Satoru Takaku ,  Nobuhito Suzuya

IPC: H01L25/065 ,  H01L23/00

CPC classification number: H01L24/46 ,  H01L24/06 ,  H01L25/0657 ,  H01L2224/06515 ,  H01L2224/46 ,  H01L2225/0651 ,  H01L2225/06506 ,  H01L2225/06562 ,  H01L2924/1435

Abstract: A semiconductor device includes a first terminal, a second terminal, and a plurality of third terminals on a substrate. Memory chips are stacked on the substrate in an offset manner. Each memory chip has first pads, second pads, and third pads thereon. A first bonding wire is electrically connected to the first terminal and physically connected to a first pad of each memory chip. A second bonding wire is electrically connected to the second terminal and physically connected to a second pad of each memory chip. A third bonding wire electrically connects one third terminal to a third pad on each memory chip. A fourth bonding wire is connected to the first bonding wire at a first pad on a first memory chip of the stack and another first pad on the first memory chip. The fourth bonding wire straddles over the second bonding wire and the third bonding wire.

公开(公告)号：US11315897B2

公开(公告)日：2022-04-26

申请号：US17002143

申请日：2020-08-25

Applicant: Kioxia Corporation

Inventor： Satoru Takaku

IPC: H01L23/053 ,  H01L23/48 ,  H01L23/28 ,  H01L21/00 ,  H01L21/44 ,  H05K1/00 ,  B23K31/02 ,  H01L23/00 ,  H01L23/488 ,  H01L23/14 ,  H01L23/538 ,  H01L23/31 ,  H01L23/498 ,  H01L23/532

Abstract: A semiconductor package includes: a semiconductor element; a substrate provided with the semiconductor element on a first surface of the substrate, the substrate including a first wiring partially exposed on a second surface of the substrate opposite to the first surface; a first structure formed of an insulating film, or an insulating film and a metal portion, the first structure surrounding an exposed portion of the first wiring, the first structure having asymmetric height and angle; and a first electrode provided on the exposed portion of the first wiring.

公开(公告)号：US11646287B2

公开(公告)日：2023-05-09

申请号：US17188595

申请日：2021-03-01

Applicant: Kioxia Corporation

Inventor： Satoru Takaku

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L24/16 ,  H01L23/3157 ,  H01L23/49838 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/16157 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2924/3511

Abstract: A semiconductor device includes an insulating substrate, a wiring, a semiconductor chip and a resin layer. The wiring is provided on the insulating substrate. The wiring board includes (i) an insulating material and (ii) a pad exposed relative to the insulating material and electrically connected to the wiring. A height of the insulating material in a vertical direction of the wiring board varies along the wiring board. The semiconductor chip includes a bump connected to the pad on a first surface of the semiconductor chip. The resin layer covers a periphery of the bump between the wiring board and the semiconductor chip.