公开(公告)号：US11756918B2

公开(公告)日：2023-09-12

申请号：US17184511

申请日：2021-02-24

Applicant: KIOXIA CORPORATION

Inventor： Tsutomu Sano ,  Kazuya Maruyama ,  Satoru Takaku ,  Nobuhito Suzuya

IPC: H01L25/065 ,  H01L23/00

CPC classification number: H01L24/46 ,  H01L24/06 ,  H01L25/0657 ,  H01L2224/06515 ,  H01L2224/46 ,  H01L2225/0651 ,  H01L2225/06506 ,  H01L2225/06562 ,  H01L2924/1435

Abstract: A semiconductor device includes a first terminal, a second terminal, and a plurality of third terminals on a substrate. Memory chips are stacked on the substrate in an offset manner. Each memory chip has first pads, second pads, and third pads thereon. A first bonding wire is electrically connected to the first terminal and physically connected to a first pad of each memory chip. A second bonding wire is electrically connected to the second terminal and physically connected to a second pad of each memory chip. A third bonding wire electrically connects one third terminal to a third pad on each memory chip. A fourth bonding wire is connected to the first bonding wire at a first pad on a first memory chip of the stack and another first pad on the first memory chip. The fourth bonding wire straddles over the second bonding wire and the third bonding wire.

公开(公告)号：US11749634B2

公开(公告)日：2023-09-05

申请号：US17142363

申请日：2021-01-06

Applicant: Kioxia Corporation

Inventor： Kazuya Maruyama ,  Tsutomu Sano ,  Junichi Saijo

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L25/0652 ,  H01L2224/45032 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/48472 ,  H01L2224/85205 ,  H01L2225/06506 ,  H01L2225/06562 ,  H01L2225/06582

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, and a wire extending between the first electrode and the second electrode. The wire includes a first conductor in contact with the first electrode and the second electrode, and a second conductor that is provided inside the first conductor and has no contact with the first electrode and the second electrode.