Invention Grant
- Patent Title: Method of forming semiconductor structure
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Application No.: US16175819Application Date: 2018-10-30
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Publication No.: US11764062B2Publication Date: 2023-09-19
- Inventor: Ping-Hao Lin , Fu-Cheng Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/027 ; H01L21/311 ; G03F7/20 ; G03F1/50 ; G03F1/58 ; G03F7/09 ; G03F7/095 ; H01L21/768 ; G03F7/00
Abstract:
A method of forming a semiconductor structure is disclosed. A multi-layer structure is formed over a substrate. A photoresist stack with a stepped sidewall is formed on the multi-layer structure. A pattern of the photoresist stack is transferred to the multi-layer structure.
Public/Granted literature
- US20190148146A1 METHOD OF FORMING SEMICONDUCTOR STRUCTURE Public/Granted day:2019-05-16
Information query
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