Invention Grant
- Patent Title: Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
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Application No.: US17734521Application Date: 2022-05-02
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Publication No.: US11776851B2Publication Date: 2023-10-03
- Inventor: Chih-Yu Ma , Zheng-Yang Pan , Shahaji B. More , Shih-Chieh Chang , Cheng-Han Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/02 ; H01L21/768 ; H01L23/485 ; H01L23/522 ; H01L23/532 ; H01L29/08 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L29/165
Abstract:
A method includes providing a substrate having a gate structure over a first side of the substrate, forming a recess adjacent to the gate structure, and forming in the recess a first semiconductor layer having a dopant, the first semiconductor layer being non-conformal, the first semiconductor layer lining the recess and extending from a bottom of the recess to a top of the recess. The method further includes forming a second semiconductor layer having the dopant in the recess and over the first semiconductor layer, a second concentration of the dopant in the second semiconductor layer being higher than a first concentration of the dopant in the first semiconductor layer.
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