Invention Grant
- Patent Title: Stacked semiconductor device and method
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Application No.: US17371660Application Date: 2021-07-09
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Publication No.: US11791332B2Publication Date: 2023-10-17
- Inventor: Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Hsing-Chih Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/06 ; H01L49/02 ; H01L29/861 ; H01L23/00 ; H01L29/66 ; H01L21/265 ; H01L23/522
Abstract:
A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.
Public/Granted literature
- US20220278095A1 STACKED SEMICONDUCTOR DEVICE AND METHOD Public/Granted day:2022-09-01
Information query
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