Invention Grant
- Patent Title: Direct current measurement of 1/f transistor noise
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Application No.: US17537007Application Date: 2021-11-29
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Publication No.: US11796588B2Publication Date: 2023-10-24
- Inventor: Yuguo Wang , Steven Loveless , Tathagata Chatterjee , Jerry Doorenbos
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Frank D. Cimino
- The original application number of the division: US15859244 2017.12.29
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
A system comprises a noise generator circuit and a noise envelope detector circuit. The noise generator circuit comprises a first amplifier including a single transistor pair that is operable to generate 1/f noise, an output amplifier coupled to the first amplifier and configured to generate a 1/f noise signal as a function of the 1/f noise. The noise envelope detector circuit comprises a low pass filter operable to pass low frequency signals of the 1/f noise signal as a filtered 1/f noise signal, and a second amplifier or a comparator coupled to the low pass filter and operable to output a direct current (DC) voltage signal according to an envelope of the filtered 1/f noise signal, where the DC voltage signal is a function of an envelope of the filtered 1/f noise signal.
Public/Granted literature
- US20220082608A1 DIRECT CURRENT MEASUREMENT OF 1/F TRANSISTOR NOISE Public/Granted day:2022-03-17
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