Invention Grant
- Patent Title: Gallium nitride-based sintered compact and method for manufacturing same
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Application No.: US17590120Application Date: 2022-02-01
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Publication No.: US11802049B2Publication Date: 2023-10-31
- Inventor: Masami Mesuda , Hideto Kuramochi
- Applicant: TOSOH CORPORATION
- Applicant Address: JP Shunan
- Assignee: TOSOH CORPORATION
- Current Assignee: TOSOH CORPORATION
- Current Assignee Address: JP Shunan
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 15069913 2015.03.30 JP 15089571 2015.04.24 JP 15150959 2015.07.30 JP 15152855 2015.07.31
- Main IPC: C01B21/06
- IPC: C01B21/06 ; C23C14/34 ; C30B29/38 ; C04B35/58 ; C23C14/06 ; C30B23/02 ; C30B25/20 ; C30B29/40 ; C30B29/68 ; H01J37/34
Abstract:
A sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity. A gallium nitride powder having powder physical properties of a low oxygen content and a high bulk density is used and hot pressing is conducted at high temperature in high vacuum to prepare a gallium nitride sintered body having a low oxygen content, a high density and a low resistivity.
Public/Granted literature
- US20220153582A1 GALLIUM NITRIDE-BASED SINTERED COMPACT AND METHOD FOR MANUFACTURING SAME Public/Granted day:2022-05-19
Information query
