- 专利标题： Plasma processing apparatus
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申请号： US17402398申请日： 2021-08-13
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公开(公告)号： US11804366B2公开(公告)日： 2023-10-31
- 发明人: Yuki Hosaka , Yoshihiro Umezawa , Toshiki Nakajima
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： WEIHROUCH IP
- 优先权： JP 14126366 2014.06.19 JP 15030444 2015.02.19
- 分案原申请号： US15312225
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01L21/67 ; C23C16/44 ; C23C16/455 ; H01L21/02 ; H01L21/311
摘要：
A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
公开/授权文献
- US20210375597A1 PLASMA PROCESSING APPARATUS 公开/授权日：2021-12-02
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