Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US17402398Application Date: 2021-08-13
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Publication No.: US11804366B2Publication Date: 2023-10-31
- Inventor: Yuki Hosaka , Yoshihiro Umezawa , Toshiki Nakajima
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: WEIHROUCH IP
- Priority: JP 14126366 2014.06.19 JP 15030444 2015.02.19
- The original application number of the division: US15312225
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67 ; C23C16/44 ; C23C16/455 ; H01L21/02 ; H01L21/311

Abstract:
A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
Public/Granted literature
- US20210375597A1 PLASMA PROCESSING APPARATUS Public/Granted day:2021-12-02
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