Invention Grant
- Patent Title: Cobalt chemistry for smooth topology
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Application No.: US17524450Application Date: 2021-11-11
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Publication No.: US11807951B2Publication Date: 2023-11-07
- Inventor: Shaopeng Sun , Kyle Whitten , Stephan Braye , Elie Najjar
- Applicant: MacDermid Enthone Inc.
- Applicant Address: US CT Waterbury
- Assignee: MacDermid Enthone Inc.
- Current Assignee: MacDermid Enthone Inc.
- Current Assignee Address: US CT Waterbury
- Main IPC: C25D3/16
- IPC: C25D3/16 ; C25D5/02 ; C25D5/18 ; C25D7/12 ; B32B15/04 ; B32B3/26 ; C25D5/00 ; C25D7/00

Abstract:
An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.
Public/Granted literature
- US20220136123A1 COBALT CHEMISTRY FOR SMOOTH TOPOLOGY Public/Granted day:2022-05-05
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